A 0.13-µm CMOS 0.1-12GHz active balun-LNA for multi-standard applications

A 0.1–12GHz Low Noise Amplifier (LNA) with an active balun is proposed for multi-standard applications. In order to realize wideband matching and single-to-differential (S2D) conversion simultaneously, a single-end resistive negative feedback amplifier is adopted as the first stage for input impedance matching, and a novel active balun consisting of common source amplifier and source follower is designed as latter stage for S2D conversion. This LNA is fabricated in a 0.13μm CMOS process with an active area of 0.33mm2. The measurement results show that over the full band of interest, the LNA achieves a minimum noise figure (NF) of 3.2 dB, input reflection coefficient S11 less than −9.3 dB, a power gain (S21) of 14.1 dB and −3.6 dBm IIP3 with a power consumption of 10.8mW from 1.2-V supply.